savantic semiconductor product specification silicon npn power transistors 2SC1881 d escription with to-220c package darlington high dc current gain applications high gain amplifier power switching pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current-dc 3 a i cm collector current-pulse 6 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC1881 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =50ma,r be = < 60 v v (br)ebo emitter-base breakdown voltage i e =50ma, i c =0 7 v v cesat collector-emitter saturation voltage i c =2.5a ,i b =20ma 1.2 v i cbo collector cut-off current v cb =60v, i e =0 0.2 ma i ceo collector cut-off current v ce =30v, ,r be = < 0.4 ma h fe-1 dc current gain i c =1.5a ; v ce =1.5v 1000 h fe-2 dc current gain i c =2.5a ; v ce =1.5v 500 t on turn-on time 1 s t off turn-off time v cc =11v, i c =2a i b1 =-i b2 =8ma 5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC1881 package outline fig.2 outline dimensions
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